EL4001 Solid State Device Modeling and Simulation Syllabus:

EL4001 Solid State Device Modeling and Simulation Syllabus – Anna University PG Syllabus Regulation 2021

COURSE OBJECTIVES:

 Apply the knowledge of device physics in modeling of integrated diode.
 Analyze and model MOS capacitor.
 Analyze and model MOSFET, FINFET and UTB.
 Analyze and model MESFET, HBT, HEMT MODFET,
 Analyze and model Optoelectronic Devices

UNIT I INTRODUCTION TO SEMICONDUCTOR PHYSICS AND DIODE MODELLING

Review of Quantum Mechanics – Boltzman transport equation – Continuity equation – Poisson equation. Junction and Schottky diodes in monolithic technologies – static and dynamic behavior – small and large signal models . SPICE modeling and simulation of PN junction and Schottky diode.

UNIT II INTEGRATED MOS CAPACITANCE

Band diagram- flat band condition and flat band voltage-surface accumulation, surface depletion threshold condition and threshold voltage, charge versus gate voltage, MOS C-V Characteristics, Poly Si gate depletion-effective Increase In Tox.

UNIT III INTEGRATED MOS TRANSISTOR

NMOS and PMOS Transistor – Threshold voltage – Threshold voltage equations – MOS device equations – Basic DC equations Second order effects – Small signal AC Characteristics- MOS models SPICE model, EKV Model, BSIM Model. Technology scaling for cost, speed and power consumption, Subthreshold Current –Subthreshold Swing, Threshold voltage Roll Off-Short Channel Leakage, reducing gate insulator electrical thickness And Tunneling Leakage, Short Channel Effects. Ultra Thin body, SOI and Multigate MOSFET – FINFET. Compact Model for Circuit Simulation using Verilog A.

UNIT IV ADVANCED SEMICONDUCTOR DEVICES

MESFETs, HBTs, HEMTs, MOSFETs.

UNIT V OPTOELECTRONICS DEVICES

Light Emitting Diodes, Lasers, Photoconductors, Junction Photodiodes, Avalanche Photodiodes, Solar Cells

TOTAL:45 PERIODS

SUGGESTED ACTIVITIES:

1: Expert Lectures from the Faculty guiding in the area of Device Modelling
2: Using facilities in https://nanohub.org/ for online simulation of devices
3. Usage of Synopsis/ Silvaco TCAD is required

COURSE OUTCOMES:

Upon completion of the course the student will be able to
CO1: Acquire the knowledge of modelling of integrated diode
CO2:Model and simulate MOS capacitor for different values of process and operating parameters
CO3 : Model and simulate SPICE, EKV and BSIM model of MOSFETs
CO4: Acquire the knowledge of modelling SoI, multigate MOSFET, UTB and FINFET devices
CO5: Acquire the knowledge of modelling of Optoelectronic devices

REFERENCES

1. Tyagi M S, “Introduction to Semi-conductor Materials and Devices”, John Wiley, 2008.
2. Chenming C.Hu, ”Modern Semiconductors for Integrated Circuits”, Prentice Hall, 2010
3. S. A. Neamen and D. Biswas, Semiconductor Physics and Devices, 4th Edition, TMH, 2012.
4. YannisTsividis,”Operation and modeling of the mos transistor” Oxford University Press,2003
5. P. Bhattacharya, Semiconductor Optoelectronics Devices, 2nd Edition, PHI, 2009.