AP4153 Semiconductor Devices and Modeling Syllabus:
AP4153 Semiconductor Devices and Modeling Syllabus – Anna University PG Syllabus Regulation 2021
COURSE OBJECTIVES:
To acquire the fundamental knowledge and to expose to the field of semiconductor theory and devices and their applications.
To gain adequate understanding of semiconductor device modelling aspects, designing devices for electronic applications
To acquire the fundamental knowledge of different semiconductor device modelling aspects.
UNIT I MOS CAPACITORS
Surface Potential: Accumulation, Depletion, and Inversion, Electrostatic Potential and Charge Distribution in Silicon, Capacitances in an MOS Structure, Polysilicon-Gate Work Function and Depletion Effects, MOS under Nonequilibrium and Gated Diodes, Charge in Silicon Dioxide and at the Silicon–Oxide Interface, Effect of Interface Traps and Oxide Charge on Device Characteristics, High-Field Effects, Impact Ionization and Avalanche Breakdown, Band-to-Band Tunneling, Tunneling into and through Silicon Dioxide, Injection of Hot Carriers from Silicon into Silicon Dioxide, High-Field Effects in Gated Diodes, Dielectric Breakdown.
UNIT II MOSFET DEVICES
Long-Channel MOSFETs, Drain-Current Model, MOSFET I–V Characteristics, Subthreshold Characteristics, Substrate Bias and Temperature Dependence of Threshold Voltage, MOSFET Channel Mobility, MOSFET Capacitances and Inversion-Layer Capacitance Effect, Short-Channel MOSFETs, Short-Channel Effect, Velocity Saturation and High-Field Transport Channel Length Modulation, Source–Drain Series Resistance, MOSFET Degradation and Breakdown at High Fields
UNIT III CMOS DEVICE DESIGN
CMOS Scaling, Constant-Field Scaling, Generalized Scaling, Nonscaling Effects, Threshold Voltage, Threshold-Voltage Requirement, Channel Profile Design, Nonuniform Doping, Quantum Effect on Threshold Voltage, Discrete Dopant Effects on Threshold Voltage, MOSFET Channel Length, Various Definitions of Channel Length, Extraction of the Effective Channel Length, Physical Meaning of Effective Channel Length, Extraction of Channel Length by C–V Measurements.
UNIT IV BIPOLAR DEVICES
n–p–n Transistors, Basic Operation of a Bipolar Transistor, Modifying the Simple Diode Theory for Describing Bipolar Transistors, Ideal Current–Voltage Characteristics, Collector Current, Base Current, Current Gains, Ideal IC–VCE Characteristics, Characteristics of a Typical n–p–n Transistor, Effect of Emitter and Base Series Resistances, Effect of Base–Collector Voltage on Collector Current, Collector Current Falloff at High Currents, Nonideal Base Current at Low Currents, Bipolar Device Models for Circuit and Time-Dependent Analyses Basic dc Model, Basic ac Model, Small-Signal Equivalent-Circuit Model, Emitter Diffusion Capacitance, Charge-Control Analysis, Breakdown Voltages, Common-Base Current Gain in the Presence of Base–Collector Junction Avalanche, Saturation Currents in a Transistor.
UNIT V MATHEMATICAL TECHNIQUES FOR DEVICE SIMULATIONS
Poisson equation, continuity equation, drift-diffusion equation, Schrodinger equation, hydrodynamic equations, trap rate, finite difference solutions to these equations in 1D and 2D space, grid generation.
TOTAL: 45 PERIODS
COURSE OUTCOMES:
Upon completion of this course, the students will be able to
CO1: Explore the properties of MOS capacitors.
CO2: Analyze the various characteristics of MOSFET devices.
CO3: Describe the various CMOS design parameters and their impact on performance of the device.
CO4: Discuss the device level characteristics of BJT transistors.
CO5: Identify the suitable mathematical technique for simulation.
REFERENCES:
1. Yuan Taur and Tak H.Ning, “Fundamentals of Modern VLSI Devices”, Cambridge University Press, 2016.
2. A.B. Bhattacharyya “Compact MOSFET Models for VLSI Design”, John Wiley & Sons Ltd, 2009.
3. Ansgar Jungel, “Transport Equations for Semiconductors”, Springer, 2009
4. Trond Ytterdal, Yuhua Cheng and Tor A. Fjeldly Wayne Wolf, “Device Modeling for Analog and RF CMOS Circuit Design”, John Wiley & Sons Ltd, 2004
5. Selberherr, S., “Analysis and Simulation of Semiconductor Devices”, Springer-Verlag., 1984
6. Behzad Razavi, “Fundamentals of Microelectronics” Wiley Student Edition, 2nd Edition, 2014
7. J P Collinge, C A Collinge, “Physics of Semiconductor devices” Springer, 2002.
8. S.M.Sze, Kwok.K. NG, “Physics of Semiconductor devices”, Springer, 2006.